Microsemi-RFIS's Gallium Nitride (GaN) Amplifier Series
Microsemi-RFIS's Gallium Nitride (GaN) amplifier products employ the latest semiconductor technologies to present the very best performance to our customers. Gallium Nitride (GaN) technology, coupled with Microsemi-RFIS’s chip and wire die level implementation maximize the high power added efficiency and high power density characteristics of GaN in small convenient packages. Multi-octave amplifiers and application specific narrow band amplifiers cover frequencies to 10.7 GHz. GaN amplifiers operate with voltages between +28VDC to +50VDC (design dependent). Catalog designs offer power levels up to 20 Watts; custom designs to 100 Watts are available. GaN amplifiers are best suited for saturated operation; they are frequently specified at 3dB output power
compression. Standard options such as TTL On/Off, Integrated Output Isolator, Over-Temperature Shut-down, Power Detectors at various frequency and gain specifications are available.
Please contact Microsemi-RFIS for all your Microwave Amplifier and Integrated Microwave Assembly inquiries.
For more information, email us at sales@amlj.com or call us at 805-388-1345.
