Microsemi-RFIS's Low Phase Noise Amplifiers utilize MMIC's and discrete transistors with the lowest phase noise available in the industry. Depending upon the frequency and power, Silicon Bipolar is the preferred transistor technology for lowest Phase Noise followed by InGaP HBT, then MESFET. Microsemi-RFIS uses a combination of these three technologies to meet customer requirements. 100% testing, device lot selection, and on-wafer variations are monitored to guarantee compliant performance.
Performance without compromise: Microsemi-RFIS model AML812PNA0901 achieves -160 dBc at 1.0 KHz offset at X-Band (see graph). Microsemi-RFIS's Low Phase Noise Amplifiers covers the frequency range of 0.8 - 12.0 GHz. Applications for Low Phase Noise Amplifiers include Doppler Radar, Data Communication Links and Multi-Channel Receivers.
Application Notes: If you would like to access more information on Phase Noise, please view the following articles below written by Microsemi-RFIS's technical staff.
Phase Noise Introduction ...................................................
[click to view]Techniques for Measuring Ultra-Low Phase Noise .................
[click to view]
Please contact Microsemi-RFIS (Formerly AML) in Camarillo, CA for all your Microwave Amplifier and Integrated Microwave Assembly inquiries.
For more information, email us at sales@amlj.com or call us at 805-388-1345.
